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參數資料
| 型號： | Q62702-F1144 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
| 中文描述： | NPN硅射頻晶體管（低失真寬帶放大器和振蕩器高達2GHz從5毫安的集電極電流30毫安） |
| 文件頁數： | 10/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1144 |
BGC420
High Frequency Products
10
Edition A13, 05/99
Table 1. Parasitic circuit elements for frequencies above 100MHz
X3
X4
R1
X2
R2
R3
R4
Q1
Vc
Vb
GND
RFin
RFout
Vr
Vcc
C2
L1
C3
Rx
V
2
3
V
Lp1
Lp2
Cp1
Cp2
Lp5
Lp3
Lp4
Lp6
Cp3
Lp7
Figure 4. Parasitic circuit elements for frequencies above 100MHz
Element
Value
Lp1
Lp2
Lp3
Lp4
Lp5
Lp6
Lp7
Cp1
Cp2
Cp3
0.58nH
0.56nH
0.23nH
0.05nH
0.53nH
0.47nH
1nH
134fF
136fF
6.9fF
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F1177 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| Q62702-F1189 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
| Q62702-F1215 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET) |
| Q62702-F1218 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
| Q62702-F1219 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) |
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