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參數資料
型號: Q62702-F1144
廠商: SIEMENS AG
英文描述: NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)
中文描述: NPN硅射頻晶體管(低失真寬帶放大器和振蕩器高達2GHz從5毫安的集電極電流30毫安)
文件頁數: 4/11頁
文件大小: 101K
代理商: Q62702-F1144
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關PDF資料
PDF描述
Q62702-F1177 Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
Q62702-F1189 NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
Q62702-F1215 GaAs FET (N-channel dual-gate GaAs MES FET)
Q62702-F1218 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Q62702-F1219 NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)
相關代理商/技術參數
參數描述
Q62702-F1177 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
Q62702-F1189 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
Q62702-F1215 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET)
Q62702-F1218 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Q62702-F1219 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)
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