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參數(shù)資料
| 型號(hào)： | Q62702-F1775 |
| 廠(chǎng)商： | SIEMENS AG |
| 英文描述： | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| 中文描述： | 硅N溝道MOSFET四極管（低噪聲，高增益控制輸入級(jí)高達(dá)1GHz工作電壓5V） |
| 文件頁(yè)數(shù)： | 11/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-F1775 |
BGC420
High Frequency Products
11
Edition A13, 05/99
Package
Published by
Infineon Technologies AG i Gr.,
Bereichs Kommunikation
St.-Martin-Strasse 76,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change
reserved.
We hereby disclaim any and all warranties, including
but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated
herein.
Infineon Technologies is an approved CECC
manufacturer.
Information
For further information on technology, delivery terms
and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or
our Infineon Technologies Representatives
worldwide (see address list).
Warnings
Due to technical requirements components may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be
used in life-support devices or systems with the
express written approval of Infineon Technologies, if
a failure of such components can reasonably be
expected to cause the failure of that life-support
device or system, or to affect the safety or
effectiveness of that device or system. Life support
devices or systems are intended to be implanted in
the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or
other persons may be endangered.
.
相關(guān)PDF資料 |
PDF描述 |
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| Q62702-F1776 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| Q62702-F182 | N-Channel junction field-Effect Transistors |
| Q62702-F205 | N-Channel junction field-Effect Transistors |
| Q62702-F209 | N-Channel junction field-Effect Transistors |
| Q62702-F219 | N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F1776 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| Q62702-F1794 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
| Q62702-F182 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:N-Channel junction field-Effect Transistors |
| Q62702-F201 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transisrors |
| Q62702-F202 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transisrors |
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