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參數(shù)資料
| 型號(hào)： | Q62702-F1775 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| 中文描述： | 硅N溝道MOSFET四極管（低噪聲，高增益控制輸入級(jí)高達(dá)1GHz工作電壓5V） |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-F1775 |
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
￥
S21
￥
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
￥
S21
￥
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-F1776 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| Q62702-F182 | N-Channel junction field-Effect Transistors |
| Q62702-F205 | N-Channel junction field-Effect Transistors |
| Q62702-F209 | N-Channel junction field-Effect Transistors |
| Q62702-F219 | N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F1776 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| Q62702-F1794 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
| Q62702-F182 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:N-Channel junction field-Effect Transistors |
| Q62702-F201 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transisrors |
| Q62702-F202 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transisrors |
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