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參數(shù)資料
| 型號(hào)： | Q62702-Y79-J |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP SILICON PLANAR TRANSISTORS |
| 中文描述： | 進(jìn)步黨硅平面型晶體管 |
| 文件頁數(shù)： | 11/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-Y79-J |
BGC420
High Frequency Products
11
Edition A13, 05/99
Package
Published by
Infineon Technologies AG i Gr.,
Bereichs Kommunikation
St.-Martin-Strasse 76,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change
reserved.
We hereby disclaim any and all warranties, including
but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated
herein.
Infineon Technologies is an approved CECC
manufacturer.
Information
For further information on technology, delivery terms
and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or
our Infineon Technologies Representatives
worldwide (see address list).
Warnings
Due to technical requirements components may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be
used in life-support devices or systems with the
express written approval of Infineon Technologies, if
a failure of such components can reasonably be
expected to cause the failure of that life-support
device or system, or to affect the safety or
effectiveness of that device or system. Life support
devices or systems are intended to be implanted in
the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or
other persons may be endangered.
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-C361-X1 | PNP SILICON TRANSISTOR |
| Q62702-G0041 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
| Q62702-G0042 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
| Q62702-G0043 | Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
| Q62702-G0057 | Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ヘ-gain block Unconditionally stable) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62703Q0070 | 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER IR ARRAY 950NM MINI TH |
| Q62703Q0071 | 制造商:OSRAM 功能描述:LED IrLED 950nm 6-Pin 制造商:OSRAM 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER IR ARRAY 950NM MINI TH 制造商:OSRAM Opto Semiconductors 功能描述:LED IrLED 950nm 6-Pin 制造商:OSRAM Opto Semiconductors 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS |
| Q62703Q0072 | 制造商:OSRAM 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER ARRAY MINI GAAS 950NM |
| Q62703Q0073 | 制造商:OSRAM 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER IR ARRAY 950NM MINI TH |
| Q62703Q0074 | 制造商:OSRAM 功能描述:EMITTER IR ARRAY 950NM MINI TH |
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