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參數資料
| 型號： | Q67040-A4463 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 散熱片 |
| 英文描述： | Heat Sink; Package/Case:TO-220; Thermal Resistance:16.7 C/W; Mounting Type:Through Hole; Length:29.97mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:No RoHS Compliant: No |
| 中文描述： | 在不擴散核武器條約快速IGBT技術 |
| 文件頁數： | 2/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040-A4463 |
Thermal Resistance
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
2
Rev. 2.2 Dec-04
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJC
0.45
R
thJA
TO-220-3-1
TO-247-3-1
TO-263-3-2 (6cm2 Cu)
62
40
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=0.2mA
V
GE
= 15V,
I
C
=50A
T
j
=25
°
C
T
j
=175
°
C
I
C
=0.8mA,
V
CE
=
V
GE
V
CE
=600V
,
V
GE
=0V
T
j
=25
°
C
T
j
=175
°
C
600
-
-
-
-
1.5
1.9
2.0
-
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
4.1
-
-
-
-
4.9
-
-
-
31
-
5.7
40
1000
100
-
V
μA
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
R
Gint
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=50A
nA
S
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
3140
200
93
310
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=50A
V
GE
=15V
TO-247-3-1
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
7
-
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
5
μ
s
V
CC
= 400V,
T
j
≤
150
°
C
-
458.3
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
相關PDF資料 |
PDF描述 |
|---|---|
| Q67040-S4237 | Heat Sink; Package/Case:TO-220; Thermal Resistance:16.7 C/W; Mounting Type:Through Hole; Length:29.97mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| Q67040-S4368 | Heat Sink; Package/Case:TO-220; Thermal Resistance:20.3 C/W; Mounting Type:Through Hole; Body Material:Plastic; Color:Black; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sink Material:Plastic RoHS Compliant: No |
| Q67040-S4369 | Heat Sink; Package/Case:TO-220; Thermal Resistance:20.3 C/W; Mounting Type:Through Hole; Length:18.03mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| Q67040-S4445 | Silicon Carbide Schottky Diode |
| Q67040-S4448 | Fast IGBT in NPT-technology |
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