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參數(shù)資料
| 型號： | Q67040-A4463 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 散熱片 |
| 英文描述： | Heat Sink; Package/Case:TO-220; Thermal Resistance:16.7 C/W; Mounting Type:Through Hole; Length:29.97mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:No RoHS Compliant: No |
| 中文描述： | 在不擴(kuò)散核武器條約快速IGBT技術(shù) |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040-A4463 |
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
7
Rev. 2.2 Dec-04
E
,
S
0A
20A
40A
60A
80A
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
0
10
20
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
6.0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 7
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 50A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
300V
350V
400V
450V
500V
550V
0mJ
1mJ
2mJ
3mJ
4mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q67040-S4237 | Heat Sink; Package/Case:TO-220; Thermal Resistance:16.7 C/W; Mounting Type:Through Hole; Length:29.97mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| Q67040-S4368 | Heat Sink; Package/Case:TO-220; Thermal Resistance:20.3 C/W; Mounting Type:Through Hole; Body Material:Plastic; Color:Black; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sink Material:Plastic RoHS Compliant: No |
| Q67040-S4369 | Heat Sink; Package/Case:TO-220; Thermal Resistance:20.3 C/W; Mounting Type:Through Hole; Length:18.03mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| Q67040-S4445 | Silicon Carbide Schottky Diode |
| Q67040-S4448 | Fast IGBT in NPT-technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67040-S4000-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) |
| Q67040-S4001-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) |
| Q67040-S4003-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor |
| Q67040-S4003-A5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor |
| Q67040-S4003-A6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor |
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