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參數資料
| 型號： | Q67040-S4276 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology |
| 中文描述： | 在不擴散核武器條約快速IGBT技術 |
| 文件頁數： | 4/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040-S4276 |
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
4
Rev. 2.2 Dec-04
I
C
,
C
100Hz
1kHz
10kHz
100kHz
0A
20A
40A
60A
80A
100A
120A
140A
T
C
=110°C
T
C
=80°C
I
C
,
C
1V
10V
100V
1000V
1A
10A
100A
10μs
1ms
DC
t
p
=2μs
50μs
10ms
f
,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(
T
j
≤
175
°
C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 7
)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
≤
175
°
C;
V
GE
=15V)
P
t
,
P
25°C
50°C
75°C
100°C 125°C 150°C
0W
50W
100W
150W
200W
250W
300W
I
C
,
C
25°C
75°C
125°C
0A
20A
40A
60A
80A
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(
T
j
≤
175
°
C)
Figure 4. Collector current as a function of
case temperature
(
V
GE
≥
15V,
T
j
≤
175
°
C)
I
c
I
c
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| Q67040S4678 | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67040-S4281 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE |
| Q67040-S4328 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS⑩ Power Transistor |
| Q67040-S4340 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| Q67040-S4351 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor |
| Q67040-S4352 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor |
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