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參數資料
| 型號： | Q67040-S4640 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CoolMOS Power Transistor |
| 中文描述： | 的CoolMOS功率晶體管 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040-S4640 |
Low Loss IGBT in Trench and Fieldstop
technology
Very low
V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
μ
s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low
V
CE(sat)
Positive temperature coefficient in
V
CE(sat)
Low EMI
Low Gate Charge
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
1
Rev. 2.2 Dec-04
T
j,max
Marking Code
Package
Ordering Code
IGP50N60T
600 V
50 A
1.5 V
175
°
C
G50T60
TO-220
Q67040S4723
IGB50N60T
600 V
50 A
1.5 V
175
°
C
G50T60
TO-263
Q67040S4721
IGW50N60T
600 V
50 A
1.5 V
175
°
C
G50T60
TO-247
Q67040S4725
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
≤
600V,
T
j
≤
175
°
C)
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
600
100
50
V
A
I
Cpuls
-
150
150
V
GE
t
SC
±
20
5
V
μ
s
P
tot
T
j
T
stg
-
333
W
-40...+175
-55...+175
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-247-3-1
(TO-220AC)
G
C
E
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
P-TO-220-3-1
(TO-220AB)
相關PDF資料 |
PDF描述 |
|---|---|
| Q67040-S4378 | Anti-Static Storage Bags; External Height:16"; External Width:12"; Features:Zipper closure, Amine-free, Noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| Q67040-S4230 | Insulation Displacement (IDC) Connector; No. of Contacts:10; Contact Termination:IDC; Gender:Female; Contact Plating:Nickel; Pitch Spacing:0.05" RoHS Compliant: Yes |
| Q67040-S4231 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| Q67040-S4340 | Insulation Displacement (IDC) Connector; No. of Contacts:10; Contact Termination:IDC; Gender:Female; Contact Plating:Nickel; Pitch Spacing:0.05" RoHS Compliant: Yes |
| Q67040-A4463 | Heat Sink; Package/Case:TO-220; Thermal Resistance:16.7 C/W; Mounting Type:Through Hole; Length:29.97mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:No RoHS Compliant: No |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67040S4644 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode |
| Q67040S4647 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thinq SiC Schottky Diode |
| Q67040-S4648 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology |
| Q67040-S4649 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| Q67040-S4650 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
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