- 您現在的位置：買賣IC網 > PDF目錄361228 > Q67040-S4640 (INFINEON TECHNOLOGIES AG) CoolMOS Power Transistor PDF資料下載
參數資料
| 型號： | Q67040-S4640 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CoolMOS Power Transistor |
| 中文描述： | 的CoolMOS功率晶體管 |
| 文件頁數： | 7/13頁 |
| 文件大?。?/td> | 402K |
| 代理商： | Q67040-S4640 |
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
7
Rev. 2.2 Dec-04
E
,
S
0A
20A
40A
60A
80A
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
0
10
20
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
6.0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 7
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 50A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
300V
350V
400V
450V
500V
550V
0mJ
1mJ
2mJ
3mJ
4mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
相關PDF資料 |
PDF描述 |
|---|---|
| Q67040-S4378 | Anti-Static Storage Bags; External Height:16"; External Width:12"; Features:Zipper closure, Amine-free, Noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| Q67040-S4230 | Insulation Displacement (IDC) Connector; No. of Contacts:10; Contact Termination:IDC; Gender:Female; Contact Plating:Nickel; Pitch Spacing:0.05" RoHS Compliant: Yes |
| Q67040-S4231 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| Q67040-S4340 | Insulation Displacement (IDC) Connector; No. of Contacts:10; Contact Termination:IDC; Gender:Female; Contact Plating:Nickel; Pitch Spacing:0.05" RoHS Compliant: Yes |
| Q67040-A4463 | Heat Sink; Package/Case:TO-220; Thermal Resistance:16.7 C/W; Mounting Type:Through Hole; Length:29.97mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:No RoHS Compliant: No |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67040S4644 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode |
| Q67040S4647 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thinq SiC Schottky Diode |
| Q67040-S4648 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology |
| Q67040-S4649 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| Q67040-S4650 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
發布緊急采購，3分鐘左右您將得到回復。