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參數(shù)資料
| 型號(hào)： | Q67040-S4673 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CoolMOS Power Transistor |
| 中文描述： | 的CoolMOS功率晶體管 |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大小： | 402K |
| 代理商： | Q67040-S4673 |
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IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
7
Rev. 2.2 Dec-04
E
,
S
0A
20A
40A
60A
80A
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
0
10
20
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
6.0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 7
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 50A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
300V
350V
400V
450V
500V
550V
0mJ
1mJ
2mJ
3mJ
4mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67040S4678 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| Q67040S4714 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| Q67040S4717 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| Q67040S4718 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| Q67040S4721 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY |
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