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參數(shù)資料
| 型號： | Q67040S4721 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY |
| 中文描述： | 低損耗IGBT的在戰(zhàn)壕和場終止技術 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040S4721 |
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
9
Rev. 2.2 Dec-04
Z
t
,
T
1μs
10μs 100μs
1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(
D = t
p
/
T
)
R
,(K/W )
0.18355
0.12996
0.09205
0.03736
0.00703
R
1
τ
,
(s)
7.425*10
-2
8.34*10
-3
7.235*10
-4
1.035*10
-4
4.45*10
-5
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
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