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參數資料
| 型號： | Q67040S4723 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY |
| 中文描述： | 低損耗IGBT的在戰壕和場終止技術 |
| 文件頁數： | 12/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040S4723 |
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
12
Rev. 2.2 Dec-04
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
r r m
90%
I
r r m
10%
I
r r m
di /dt
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di
/dt
r r
Q =Q
Q
S
F
+
t =t
t
S
F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T (t)
τ
1
r
1
τ
2
r
2
n
n
τ
r
T
C
r
r
r
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
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| Q67040S4726 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss IGBT in Trench and Fieldstop technology |
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