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參數資料
| 型號： | Q67041-A4712-A2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast S-IGBT in NPT-technology |
| 中文描述： | 快速的S -不擴散核武器條約IGBT的技術 |
| 文件頁數： | 7/12頁 |
| 文件大小： | 275K |
| 代理商： | Q67041-A4712-A2 |
SGP20N60
SGB20N60, SGW20N60
7
Mar-00
E
,
S
0A
10A
20A
30A
40A
50A
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E
on
*
E
off
E
ts
*
E
,
S
0
10
20
30
40
50
60
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E
ts
*
E
on
*
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 16
)
R
G
,
GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 20A)
E
,
S
0°C
50°C
100°C
150°C
0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
1ms
10ms 100ms
1s
10
-4
K/W
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 20A,
R
G
= 16
)
t
p
,
PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
*)
E
and
E
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(1/W )
0.1882
0.3214
0.1512
0.0392
τ
,
(s)
=
0.1137
2.24*10
-2
7.86*10
-4
9.41*10
-5
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