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參數資料
| 型號： | Q67041-S4029 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SIPMOS剖 Small-Signal-Transistor |
| 中文描述： | SIPMOS剖小信號晶體管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 385K |
| 代理商： | Q67041-S4029 |
SGP02N60,
SGB02N60
SGD02N60
1
Jul-02
Fast IGBT in NPT-technology
75% lower
E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
http://www.infineon.com/igbt/Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SGP02N60
600V
2A
2.2V
150
°
C
TO-220AB
Q67040-S4504
SGB02N60
SGD02N60
TO-263AB
TO-252AA(DPAK)
Q67040-S4505
Q67041-A4707
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
600
V
A
6.0
2.9
I
Cpuls
-
12
12
V
GE
E
AS
±
20
13
V
Avalanche energy, single pulse
I
C
= 2 A,
V
CC
= 50 V,
R
GE
= 25
,
start at
T
j
= 25
°
C
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
mJ
t
SC
10
μ
s
P
tot
30
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-220-3-1
(TO-220AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
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