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參數(shù)資料
| 型號(hào)： | Q67041-S4029 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SIPMOS剖 Small-Signal-Transistor |
| 中文描述： | SIPMOS剖小信號(hào)晶體管 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大小： | 385K |
| 代理商： | Q67041-S4029 |
SGP02N60,
SGB02N60
SGD02N60
6
Jul-02
t
,
S
0A
1A
2A
3A
4A
5A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
0
100
200
300
400
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 118
,
Dynamic test circuit in Figure E)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 2A,
Dynamic test circuit in Figure E)
t
,
S
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 2A,
R
G
= 118
,
Dynamic test circuit in Figure E)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.15mA)
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