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參數資料
| 型號： | Q67060-S6101-A4 |
| 廠商： | SIEMENS AG |
| 英文描述： | Smart Highside Power Switch |
| 中文描述： | 智能阻抗高側電源開關 |
| 文件頁數： | 3/14頁 |
| 文件大小： | 182K |
| 代理商： | Q67060-S6101-A4 |
BTS 410 D2
Semiconductor Group
3
Electrical Characteristics
Parameter and Conditions
at T
j
= 25 °C, V
bb
= 12 V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 1.6 A
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V, T
C
= 85 °C
Output current (pin
5
) while GND disconnected or
GND pulled up, V
bb
=30 V, V
IN
= 0, see diagram
page 7, T
j
=-40...+150°C
Turn-on time
Turn-off time
R
L
= 12
,
T
j
=-40...+150°C
Slew rate on
10 to 30% V
OUT
,
R
L
= 12
,
T
j
=-40...+150°C
Slew rate off
70 to 40% V
OUT
, R
L
= 12
,
T
j
=-40...+150°C
T
j
=25 °C:
T
j
=150 °C:
R
ON
--
190
390
220
440
m
I
L(ISO)
I
L(GNDhigh)
1.6
1.8
--
1
A
--
--
mA
IN
IN
to 90% V
OUT
:
to 10% V
OUT
:
t
on
t
off
12
5
--
--
125
85
μ
s
dV dt
on
--
--
3
V/
μ
s
-dVdt
off
--
--
6
V/
μ
s
Operating Parameters
Operating voltage
6
)
Undervoltage shutdown
T
j
=-40...+150°C:
T
j
=25°C:
T
j
=-40...+150°C:
T
j
=-40...+150°C:
V
bb(on)
V
bb(under)
4.7
2.9
2.7
--
--
--
--
42
4.5
4.7
4.9
6.0
V
V
Undervoltage restart
Undervoltage restart of charge pump
see diagram page 12
Undervoltage hysteresis
V
bb(under)
= V
bb(u rst)
- V
bb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection
7
)
I
bb
=4 mA
Standby current (pin 3)
V
IN
=0, I
ST
≤
0
,
Leakage output current (included in I
bb(off)
)
V
IN
=0
Operating current (Pin 1)
8)
, V
IN
=5 V,
T
j
=-40...+150°C
6
)
At supply voltage increase up to V
bb
= 5.6 V typ without charge pump, V
OUT
≈
V
bb
- 2 V
7)
Meassured without load
.
See also V
ON(CL)
in table of protection functions and circuit diagram page 7.
V
bb(u rst)
V
bb(ucp)
--
--
V
V
5.6
V
bb(under)
--
0.1
--
V
T
j
=-40...+150°C:
T
j
=-40...+150°C:
T
j
=-40...+150°C:
T
j
=-40...+150°C:
V
bb(over)
V
bb(o rst)
V
bb(over)
V
bb(AZ)
42
40
--
65
--
--
52
--
--
--
V
V
V
V
0.1
70
T
j
=-40...+25°C
:
T
j
= 150°C:
I
bb(off)
--
--
--
10
18
--
15
25
20
μ
A
I
L(off)
μ
A
I
GND
--
1
2.1
mA
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