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參數(shù)資料
| 型號： | Q67060-S6101-A4 |
| 廠商： | SIEMENS AG |
| 英文描述： | Smart Highside Power Switch |
| 中文描述： | 智能阻抗高側電源開關 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 182K |
| 代理商： | Q67060-S6101-A4 |
BTS 410 D2
Values
typ
max
Parameter and Conditions
at T
j
= 25 °C, V
bb
= 12 V unless otherwise specified
Symbol
Unit
min
Semiconductor Group
4
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
9
)
,
(
max 450
μ
s if V
ON
> V
ON(SC)
)
I
L(SCp)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
9
--
4
--
12
--
23
--
15
A
Overload shutdown current limit
V
ON
= 8 V, T
j
= T
jt
(see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
V
ON
> V
ON(SC)
,
min value valid only, if input "low" time exceeds 60
μ
s
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
I
L
= 40 mA, T
j
=-40..+150°C:
I
L(SCr)
--
5
--
A
T
j
=-40..+150°C:
t
d(SC)
--
--
450
μ
s
V
ON(CL)
61
--
68
--
73
75
V
I
L
= 1 A, T
j
=-40..+150°C:
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
10
)
V
ON(SC)
T
jt
T
jt
-V
bb
--
8.5
--
--
--
V
150
--
°C
K
V
--
--
10
--
32
Diagnostic Characteristics
Open load detection current
(on-condition)
T
j
=-40 ..150°C:
I
L (OL)
2
--
150
mA
8
)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
9
)
Short circuit current limit for max. duration of t
d(SC) max
=450
μ
s, prior to shutdown
10
)Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
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