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參數(shù)資料
| 型號(hào)： | Q67060-S6118 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed CMOS Logic Dual 4-Input NOR Gates 14-TSSOP -55 to 125 |
| 中文描述： | 智能阻抗高側(cè)電源開關(guān)一個(gè)頻道：20mз狀態(tài)反饋 |
| 文件頁數(shù)： | 5/19頁 |
| 文件大小： | 461K |
| 代理商： | Q67060-S6118 |
2004-01-27
Page 5
BTS 4141D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at
T
j
= -40...125 °C,
V
bb
= 15...30 V unless otherwise specified
Operating Parameters
min.
typ.
max.
Operating voltage
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(under)
12
-
45
V
Undervoltage shutdown
7
-
10.5
Undervoltage restart
-
-
11
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
Standby current
T
j
= -40...85 °C,
V
IN
≤
1,2 V
T
j
= 125 °C
1)
Operating current
-
0.5
-
I
bb(off)
-
-
10
-
25
50
μA
I
GND
I
L(off)
-
1
1.6
mA
Leakage output current (included in
I
bb(off)
)
V
IN
≤
1,2 V
-
3.5
10
μA
Protection Functions
2)
Initial peak short circuit current limit
T
j
= -40 °C,
V
bb
= 20 V,
t
m
= 150 μs
T
j
= 25 °C
T
j
= 125 °C
I
L(SCp)
-
-
0.7
-
1.4
-
2.1
-
-
A
Repetitive short circuit current limit
T
j
= T
jt
(see timing diagrams)
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
,
I
bb
= 4 mA
Overvoltage protection
3)
I
bb
= 4 mA
Thermal overload trip temperature
4)
I
L(SCr)
-
1.1
-
V
ON(CL)
47
52
-
V
V
bb(AZ)
47
-
-
T
jt
T
jt
135
-
-
°C
Thermal hysteresis
-
10
-
K
1higher current due temperature sensor
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation
.
3see also VON(CL) in circuit diagram
4 higher operating temperature at normal function available
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