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參數(shù)資料
| 型號： | Q67060-S6118 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed CMOS Logic Dual 4-Input NOR Gates 14-TSSOP -55 to 125 |
| 中文描述： | 智能阻抗高側(cè)電源開關(guān)一個(gè)頻道：20mз狀態(tài)反饋 |
| 文件頁數(shù)： | 9/19頁 |
| 文件大小： | 461K |
| 代理商： | Q67060-S6118 |
2004-01-27
Page 9
BTS 4141D
Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection)
Direct Power Injection:
Forward Power CW
Failure criteria:
Amplitude and frequency deviation max. 10% at Out
Typ.
V
bb-Pin Susceptibility at DC-On/Off
0
5
1 0
1 5
2 0
2 5
3 0
3 5
4 0
1
1 0
1 0 0
1 0 0 0
f / M H z
d
L im it
V B B , O N
V B B , O F F
D e vic e : B T S 4 1 4 2
L o a d : 4 7 O h m s
O -M o d e : O N / O F F / P W M
C o u p lin g P o in t: V B B
M o n ito rin g : O u t
M o d u la tio n : C W
Typ.
V
bb-Pin Susceptibility at PWM-Mode
0
5
1 0
1 5
2 0
2 5
3 0
3 5
4 0
1
1 0
1 0 0
1 0 0 0
f / M H z
d
L im it
V B B , P W M
D e vic e : B T S 4 1 4 2
L o a d : 4 7 O h m s
O -M o d e : O N / O F F / P W M
C o u p lin g P o in t: V B B
M o n ito rin g : O u t
M o d u la tio n : C W
Test circuit:
PROFET
V
OUT
IN
bb
R
L
HF
5μH
150
6,8nF
5μH
150
6,8nF
GND
R
GND
For defined decoupling and high reproducibility the same choke and the same
150
-matching network as for the emission measurement is used.
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| Q67060-S6119 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch One Channel: 20mз Status Feedback |
| Q67060-S6120 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart High-Side Power Switch 1 Channel: 1 x 200mз |
| Q67060-S6121 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart High-Side Power Switch 1 Channel: 1 x 200mз |
| Q67060-S6127 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart High-Side Power Switch 1 Channel: 1 x 200mз |
| Q67060-S6128 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart High-Side Power Switch 1 Channel: 1 x 200mз |
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