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參數資料
| 型號： | Q67078-A4401-A2 |
| 廠商： | SIEMENS AG |
| 英文描述： | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) |
| 中文描述： | IGBT的（低正向壓降高開關速度低尾電流閉鎖免費） |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 381K |
| 代理商： | Q67078-A4401-A2 |
Semiconductor Group
2
Dec-06-1995
BUP 202
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
-
-
Values
E
55 / 150 / 56
Unit
-
Thermal Resistance
IGBT thermal resistance, chip case
R
thJC
≤
1
K/W
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
GE
= V
CE,
I
C
= 0.3 mA
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 5 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 5 A, T
j
= 125 °C
V
GE
= 15 V, I
C
= 5 A, T
j
= 150 °C
Zero gate voltage collector current
V
CE
= 1000 V, V
GE
= 0 V, T
j
= 25 °C
V
CE
= 1000 V, V
GE
= 0 V, T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V, V
CE
= 0 V
V
GE(th)
4.5
5.5
6.5
V
V
CE(sat)
-
-
-
4
3.8
2.8
4.5
4.3
3.3
I
CES
-
-
-
1
300
100
μA
I
GES
-
0.1
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V, I
C
= 1.5 A
Input capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Output capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Reverse transfer capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
g
fs
1.7
2.5
-
S
C
iss
-
650
870
pF
C
oss
-
50
80
C
rss
-
20
30
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