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參數(shù)資料
| 型號： | Q67100-3039 |
| 廠商： | SIEMENS AG |
| 英文描述： | 256K x 16-Bit EDO-Dynamic RAM |
| 中文描述： | 256K x 16位江戶動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 8/53頁 |
| 文件大小： | 418K |
| 代理商： | Q67100-3039 |
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HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
8
12.99
DQM
LDQM
UDQM
Input
Pulse
Active
High
The Data Input/Output mask places the DQ buffers in a
high impedance state when sampled high. In Read mode,
DQM has a latency of two clock cycles and controls the
output buffers like an output enable. In Write mode, DQM
has a latency of zero and operates as a word mask by
allowing input data to be written if it is low but blocks the
write operation if DQM is high.
One DQM input it present in
×
4 and
×
8 SDRAMs, LDQM
and UDQM controls the lower and upper bytes in
×
16
SDRAMs.
V
DD
V
SS
Supply
–
–
Power and ground for the input buffers and the core logic.
V
DDQ
V
SSQ
Supply –
–
Isolated power supply and ground for the output buffers to
provide improved noise immunity.
V
REF
Input
Level
–
Reference voltage for SDRAM versions supporting SSTL
interface
Signal Pin Description
(cont’d)
Pin
Type
Signal Polarity Function
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| Q67100-H3217 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1/2 Kbit 128/256 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus |
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