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參數(shù)資料
| 型號： | Q67100-H3525 |
| 廠商： | SIEMENS AG |
| 英文描述： | 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| 中文描述： | 4千位512 × 8位串行CMOS EEPROM的，I2C同步2線巴士，頁面保護模式 |
| 文件頁數(shù)： | 15/53頁 |
| 文件大小： | 418K |
| 代理商： | Q67100-H3525 |
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HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
15
12.99
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70
°
C
Storage Temperature Range..................................................................................
– 55 to + 150
°
C
Input/Output Voltage......................................................................................... – 0.3 to
V
DD
+ 0.3 V
Power Supply Voltage
V
DD
/
V
DDQ
.............................................................................. – 0.3 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data Out Current (short circuit)............................................................................................... 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Notes
1. All voltages are referenced to
V
SS
2.
V
IH
may overshoot to
V
DD
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
IL
may undershoot to
– 2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Recommended Operation and DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2
Input Low Voltage
Output High Voltage (
I
OUT
= – 4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
– 0.3
V
1, 2
2.4
–
V
–
–
0.4
V
μ
A
–
– 5
5
–
I
O(L)
– 5
5
μ
A
–
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input Capacitance (CLK)
C
I1
C
I2
2.5
3.5
pF
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
2.5
3.8
pF
Input/Output Capacitance (DQ)
C
IO
4.0
6.0
pF
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PDF描述 |
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| Q67100-H3526 | 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3527 | 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3528 | 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus |
| Q67100-H3529 | 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus |
| Q67100-H3530 | 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67100-H3526 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3527 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3528 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus |
| Q67100-H3529 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus |
| Q67100-H3530 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
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