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參數資料
型號: Q67100-Q1151
廠商: SIEMENS AG
英文描述: 2M x 8 - Bit Dynamic RAM 2k Refresh
中文描述: 200萬× 8 -位動態隨機存儲器2k刷新
文件頁數: 14/53頁
文件大小: 418K
代理商: Q67100-Q1151
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
14
12.99
Burst Termination
Once a burst read or write operation has been initiated, there are several methods in which to
terminate the burst operation prematurely. These methods include using another Read or Write
Command to interrupt an existing burst operation, use a Precharge Command to interrupt a burst
cycle and close the active bank, or using the Burst Stop Command to terminate the existing burst
operation but leave the bank open for future Read or Write Commands to the same page of the
active bank. When interrupting a burst with another Read or Write Command care must be taken to
avoid DQ contention. The Burst Stop Command, however, has the fewest restrictions making it the
easiest method to use when terminating a burst operation before it has been completed. If a Burst
Stop command is issued during a burst write operation, then any residual data from the burst write
cycle will be ignored. Data that is presented on the DQ pins before the Burst Stop Command is
registered will be written to the memory.
A10
BA0
BA1
0
0
0
Bank 0
0
0
1
Bank 1
0
1
0
Bank 2
0
1
1
Bank 3
1
x
x
all Banks
相關PDF資料
PDF描述
Q67100-Q1152 2M x 8 - Bit Dynamic RAM 2k Refresh
Q67100-Q1184 3.3V 4M x 4-Bit EDO-Dynamic RAM
Q67100-Q1186 3.3V 4M x 4-Bit EDO-Dynamic RAM
Q67100-Q1331 16 MBit Synchronous DRAM
Q67100-Q1333 16 MBit Synchronous DRAM
相關代理商/技術參數
參數描述
Q67100-Q1152 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8 - Bit Dynamic RAM 2k Refresh
Q67100-Q1184 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
Q67100-Q1186 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
Q67100-Q1323 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM
Q67100-Q1327 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM
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