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參數資料
型號: Q67100-Q2006
廠商: SIEMENS AG
英文描述: 4M x 36-Bit Dynamic RAM Module
中文描述: 4米× 36位動態隨機存儲器模塊
文件頁數: 9/53頁
文件大?。?/td> 418K
代理商: Q67100-Q2006
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
9
12.99
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at
the positive edge of the clock. The following list shows the truth table for the operation commands.
Notes
1.
V = Valid, x = Don’t Care, L = Low Level, H = High Level
2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock
before the commands are provided.
3. This is the state of the banks designated by BA0, BA1 signals.
4. Device state is Full Page Burst operation
5. Power Down Mode can not entry in the burst cycle. When this command assert in the burst mode
cycle device is clock suspend mode.
Operation
Device
State
Idle
3
Active
3
Active
3
CKE
n-1
CKE
n
CS
RAS
CAS
WE
DQM A0-9,
A11
A10
BA0
BA1
Row Activate (ACT)
H
X
L
L
H
H
X
V
V
V
Read (READ)
H
X
L
H
L
H
X
V
L
V
Read w/ Autoprecharge
(READA)
H
X
L
H
L
H
X
V
H
V
Write (WRITE)
Active
3
Active
3
H
X
L
H
L
L
X
V
L
V
Write w/ Autoprecharge
(WRITEA)
H
X
L
H
L
L
X
V
H
V
Row Precharge (PRE)
Any
H
X
L
L
H
L
X
X
L
V
Precharge All (PREA)
Any
H
X
L
L
H
L
X
X
H
X
Mode Register Set (MRS)
Idle
H
X
L
L
L
L
X
V
V
V
No Operation (NOP)
Any
H
X
L
H
H
H
X
X
X
X
Device Deselect (INHBT)
Any
H
X
H
X
X
X
X
X
X
X
Auto Refresh (REFA)
Idle
H
H
L
L
L
H
X
X
X
X
Self Refresh Entry (REFS-EN) Idle
H
L
L
L
L
H
X
X
X
X
Self Refresh Exit (REFS-EX)
Idle
(Self
Refr.)
L
H
H
X
X
X
X
X
X
X
L
H
H
X
Power Down Entry (PDN-EN) Idle
Active
5
H
L
H
X
X
X
X
X
X
X
L
H
H
X
Power Down Exit (PDN-EX)
Any
(Power
Down)
L
H
H
X
X
X
X
X
X
X
L
H
H
L
Data Write/Output Enable
Active
H
X
X
X
X
X
L
X
X
X
Data Write/Output Disable
Active
H
X
X
X
X
X
H
X
X
X
相關PDF資料
PDF描述
Q67100-Q2007 8M x 36-Bit Dynamic RAM Module
Q67100-Q2067 2M x 32-Bit Dynamic RAM Module
Q67100-Q2068 2M x 32-Bit Dynamic RAM Module
Q67100-Q2069 2M x 32-Bit Dynamic RAM Module
Q67100-Q2072 256k x 16-Bit EDO-DRAM
相關代理商/技術參數
參數描述
Q67100-Q2007 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 36-Bit Dynamic RAM Module
Q67100-Q2008 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 32-Bit Dynamic RAM Module
Q67100-Q2009 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module
Q67100-Q2010 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module
Q67100-Q2012 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
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