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參數資料
型號: Q67100-Q749
廠商: SIEMENS AG
英文描述: 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
中文描述: 100萬× 4位動態隨機存儲器的低功耗100萬× 4位動態隨機存儲器
文件頁數: 52/53頁
文件大小: 418K
代理商: Q67100-Q749
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
51
21.2 CAS Latency = 3
~
terminate when the burst length is satisfied;
the burst counter increments and continues
Command
Bank B
bursting beginning with the starting address.
page address back to zero
during this time interval.
DQ
DQM
Addr.
AP
Bank B
from the highest order
The burst counter wraps
Command
Activate
Write
Command
Bank A
Bank A
Command
Activate
Z
Hi
DAx
DAx+1
RAx
RAx
CAx
DAx
~
3
DAx
+
DAx 2
~
~
DAx
-1
DAx 1
+
~
RBx
~
RBx
~
SPT03932
Data is
ignored.
Full Page burst operation does not
Write
Precharge
Command
Bank B
Burst Stop
Command
4
DBx
DBx
1
DBx
+
2
DBx
DBx
3
+
CBx
DBx+5
Command
Bank B
Activate
RBy
RBy
T8
BS
WE
CAS
RAS
CS
CKE
CLK
~
~
~
~
~
~
~
~
T3
High
T0
CK3
t
T1
T2
~
~
~
T4
~
T5
T6
T7
T18
T13
T9
T10
T11 T12
T15
T14
T16
T17
T20
T19
T21 T22
Burst Length = Full Page, CAS Latency = 3
相關PDF資料
PDF描述
Q67100-H3500 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
Q67100-H3501 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
Q67100-H3502 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
Q67100-H3503 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
Q67100-H3504 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
相關代理商/技術參數
參數描述
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Q67100-Q751 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
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Q67100-Q757 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
Q67100-Q758 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
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