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參數資料
| 型號： | QED222 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 紅外LED |
| 英文描述： | AIGAAS INFRARED EMITTING DIODE |
| 中文描述： | 4.9 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 103K |
| 代理商： | QED222 |
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221
QED222
QED223
DS300337
12/07/01
3 OF 4
www.fairchildsemi.com
Normalized to:
I
= 100 mA, T
= 25C
Pulse Width = 100 μs
10
1
1
10
N
O
I
F
- INPUT CURRENT (mA)
100
1000
0.1
0.01
0.001
N
LENS TIP SEPERATION (INCHES)
Fig. 2 Coupling Characteristics of QED22X with QSD12X
0
1
1
0.8
0.6
0.4
0.2
0
2
3
4
5
6
Normalized to:
Pulse Width = 100 μs
Duty Cycle = 0.1%
V
CC
= 5 V
R
L
= 100
T
A
= 25
C
I
F
= 100 mA
I
F
= 20 mA
2.5
2
1.5
1
0.5
-30
-40
-20
-10
0
10
20
30
40
50
60
70
80
90
100
0
V
F
T
A
- TEMPERATURE (
C)
Fig. 3 Forward Voltage vs. Temperature
I
F
= 10 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 50 mA
Pulse Width = 100 μs
Duty Cycle = 0.1%
Fig. 6 Radiation Pattern
Fig. 4 Normalized Radiant Intensity vs. Wavelength
λ
(nm)
775
800
825
850
875
900
925
950
N
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
20
40
60
80
100
20
40
60
80
100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
T
A
= 25
C
1
2
I
F
V
F
- FORWARD VOLTAGE (V)
Fig. 5 Forward Current vs. Forward Voltage
3
4
100
1000
10
1
Fig. 1 Normalized Radiant Intensity vs. Input Current
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相關代理商/技術參數 |
參數描述 |
|---|---|
| QED222 | 制造商:Fairchild Semiconductor Corporation 功能描述:IR Emitting Diode |
| QED222_Q | 功能描述:紅外發射源 16mW/sr 1.7V IR LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QED223 | 功能描述:紅外發射源 25mW/sr 1.7V IR LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QED223 | 制造商:Fairchild Semiconductor Corporation 功能描述:INFRARED LED ROHS COMPLIANT:NO |
| QED223_022 | 制造商:Fairchild Semiconductor Corporation 功能描述:T1 3/4, ALGAAS LED - Bulk |
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