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參數資料
| 型號： | QED522 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 紅外LED |
| 英文描述： | AIGAAS INFRARED EMITTING DIODE |
| 中文描述： | 4.67 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 封裝： | PLASTIC, TO-46, 2 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 383K |
| 代理商： | QED522 |
6/13/02
Page 2 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QED522 QED523
NOTES:
1. Derate power dissipation linearly 2.67 mW/
°
C above 25
°
C.
2. RMA
fl
ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise speci
fi
ed)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
T
STG
-40 to + 100
°
C
Storage Temperature
-40 to + 100
°
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
°
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
°
C
Continuous Forward Current
I
F
100
mA
Reverse Voltage
V
R
5
V
Power Dissipation
(1)
P
D
200
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25
°
C)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Peak Emission Wavelength
I
F
= 100 mA
λ
PE
—
880
—
nm
Emission Angle
I
F
= 100 mA
2
Θ
1/2
—
20
—
Deg.
Forward Voltage
I
F
= 100 mA, tp = 20 ms
V
F
—
—
1.8
V
Reverse Current
V
R
= 5 V
I
R
I
E
I
E
t
r
t
—
—
10
μA
Radiant Intensity QEC522
I
F
= 100 mA, tp = 20 ms
20
—
80
mW/sr
Radiant Intensity QEC523
I
F
= 100 mA, tp = 20 ms
40
—
—
mW/sr
Rise Time
I
F
= 100 mA
—
800
—
ns
Fall Time
f
—
800
—
ns
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