- 您現在的位置：買賣IC網 > PDF目錄361324 > QSX7 (Rohm CO.,LTD.) General purpose amplification (12V, 1.5A) PDF資料下載
參數資料
| 型號： | QSX7 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose amplification (12V, 1.5A) |
| 中文描述： | 通用放大（12V的，1.5A的） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 69K |
| 代理商： | QSX7 |
QSX7
Transistors
General purpose amplification (12V, 1.5A)
Rev.B
1/2
QSX7
z
Application
Low frequency amplifier
z
Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
200mV
At I
C
= 500mA / I
B
= 25mA
z
Absolute maximum ratings
(Ta=25
°
C)
z
External dimensions
(Unit : mm)
1.6
2.8
0
0
(
0
(
2
(
Each lead has same dimensions
Abbreviated symbol : X07
(
(
(
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Unit
V
V
V
A
A
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
P
C
W/ELEMENT
°
C
°
C
Power dissipation
Tj
Junction temperature
Range of storage temperature
Single pulse, P
W
=
1ms
Each Terminal Mounted on a Recommended
2
Mounted on a 25mm
25mm
0.8mm Ceramic substrate
3
z
Electrical characteristics
(Ta=25
°
C)
Tstg
Limits
15
12
6
1.5
3
0.9
150
55 to
+
150
3
W/TOTAL
1.25
3
mW/TOTAL
500
1
z
Equivalent circuit
(4)
(5)
(6)
Tr
1
Tr
2
(1)
(2)
(3)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
15
12
6
270
Typ. Max.
85
400
12
Unit
V
V
V
nA
nA
mV
MHz V
CE
=
2V, I
E
=
200mA, f
=
100MHz
pF
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Conditions
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
/I
B
=
500mA/25mA
V
CE
/I
C
=
2V/200mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
100
100
200
680
Pulsed
相關PDF資料 |
PDF描述 |
|---|---|
| QSZ1 | General purpose transistor |
| QSZ2 | 357 POS 1.27MM PITCH BGA SOCKET |
| QSZ3 | General purpose transistor (isolated transistor and diode) |
| QT-BNC | RF Coaxial Connectors |
| QT0081411TUE | Controller Miscellaneous - Datasheet Reference |
相關代理商/技術參數 |
參數描述 |
|---|---|
| QSX7TR | 功能描述:兩極晶體管 - BJT TRANS GP BJT NPN 12V 1.5A 6PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| QSX8 | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose amplification (30V, 1A) |
| QSX8TR | 功能描述:兩極晶體管 - BJT TRANS GP BJT NPN 30V 1A 6PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| QSXTM14745CF35CRF6 | 制造商:MEC 功能描述: |
| QSXTM17664BF35CRF6 | 制造商:MEC 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。