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參數資料
| 型號： | R3788 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | PHOTOMULTlPLlER TUBES |
| 中文描述： | PHOTOMULTlPLlER管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | R3788 |
High Sensitivity, Bialkali Photocathode
28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
GENERAL
FEATURES
Spectral Response
Parameter
Description
Unit
Spectral Response
R3788
R4332
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
185 to 750
160 to 750
nm
nm
nm
420
Structure
Number of Stages
4
6
pF
pF
Anode to Last Dynode
Anode to All Other Electrodes
R3788
R4332
Dynode
Bialkali
8 24
Secondary Emitting Surface
Bialkali
Circular-cage
9
mm
Weight
SuitabIe Socket
g
45
Direct Interelectrode Capacitances
Base
SuitabIe Socket Assembly
UV glass
Fused silica
11-pin base
JEDEC No. B11-88
E717–21(option)
E678–11A (option)
PHOTOMULTlPLlER TUBES
R3788, R4332
APPLICATIONS
Fluorescence Spectrophotometers
Emission Spectrophotometers
Atomic Absorption Spectrophotometers
R3788 ....................................................
R4332 .....................................................
High Cathode Sensitivity
Luminous ...........................................
Radiant at 420nm ..................................
Quantum Efficiency at 210nm .........
High Anode Sensitivity (at 1000V)
Luminous ...............................................
Radiant at 420nm ............................
185 to 750 nm
160 to 750 nm
120 A/lm Typ.
90mA/W Typ.
40% Typ. (R4332)
1200A/lm Typ.
9.0 10
5
A/W Typ.
Figure 1:
Typical Spectral Response
TPMSB0081EA
0.01
0.1
10
100
100
200
300
400
500
600
700
800
WAVELENGTH (nm)
P
Q
1
R3788
R4332
CATHODE RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 1994 Hamamatsu Photonics K.K.
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