欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號： RD48F2P0VTQ0
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲器
文件頁數： 1/102頁
文件大小： 1609K
代理商： RD48F2P0VTQ0
Order Number: 306666, Revision: 001
April 2005
Intel StrataFlash
Embedded Memory
(P30)
1-Gbit P30 Family
Datasheet
Product Features
The Intel StrataFlash
Embedded Memory (P30) product is the latest generation of Intel
StrataFlash
memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel
130 nm ETOX VIII process technology.
■
High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to-
data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming
(BEFP) at 5 μs/byte (Typ)
— 1.8 V buffered programming at 7 μs/byte (Typ)
■
Architecture
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
■
Voltage and Power
— V
CC
(core) voltage: 1.7 V – 2.0 V
— V
CCQ
(I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 μA (Typ) for 256-Mbit
— 4-Word synchronous read current:
13 mA (Typ) at 40 MHz
■
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX VIII process technology (130 nm)
■
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
64 user-programmable OTP bits
Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
4x32KB parameter blocks + 3x128KB main
blocks (top or bottom configuration)
— Absolute write protection: V
PP
= V
SS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
■
Software
— 20 μs (Typ) program suspend
— 20 μs (Typ) erase suspend
— Intel
Flash Data Integrator optimized
— Basic Command Set and Extended Command
Set compatible
— Common Flash Interface capable
■
Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP
package
— 64/128/256/512-Mbit densities in 64-Ball
Intel
Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in
Intel
QUAD+ SCSP
— 16-bit wide data bus
相關PDF資料
PDF描述
RD48F3P0VTQ0 Intel StrataFlash Embedded Memory
RD48F4P0VTQ0 Intel StrataFlash Embedded Memory
RD60HUF1 MITSUBISHI RF POWER MOS FET
RD70HHF1 Silicon MOSFET Power Transistor 30MHz, 70W
RDC1741444B 12- and 14-Bit Hybrid Synchro/ Resolver-to-Digital Converters
相關代理商/技術參數
參數描述
RD48F2P0ZB00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
RD48F2P0ZBQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
RD48F2P0ZT00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
RD48F2P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
RD48F3000L0ZBQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel StrataFlash㈢ Wireless Memory with 3.0-Volt I/O (L30)
發布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發布成功！您可以繼續發布采購。也可以進入我的后臺，查看報價

發布成功！您可以繼續發布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯系方式

*
*
*
主站蜘蛛池模板： 福泉市| 雷波县| 祥云县| 英德市| 那坡县| 丰原市| 泰和县| 大埔县| 舞阳县| 普安县| 勐海县| 高雄县| 资溪县| 乌兰察布市| 莱阳市| 赤城县| 江门市| 宿迁市| 禄丰县| 化德县| 汉川市| 南投县| 中阳县| 惠安县| 禄丰县| 延长县| 灵寿县| 安达市| 陵川县| 青阳县| 大埔县| 谷城县| 株洲县| 抚州市| 滁州市| 霍山县| 武威市| 临湘市| 北宁市| 保靖县| 苍南县|