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參數資料
型號: RF1S45N03LSM
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述: 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數: 1/7頁
文件大小: 100K
代理商: RF1S45N03LSM
7-1
Semiconductor
RFP45N03L,
RF1S45N03L, RF1S45N03LSM
45A, 30V, 0.022 Ohm,
Logic Level, N-Channel Power MOSFETs
September 1998
Features
45A, 30V
r
DS(ON)
= 0.022
Temperature CompensatingPSPICE Model
Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum utili-
zation of silicon, resulting in outstanding performance. They
were designed for use in applications such as switching reg-
ulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA49030.
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N03L
TO-220AB
FP45N03L
RF1S45N03L
TO-262AA
F45N03L
RF1S45N03LSM
TO-263AB
F45N03L
NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
4005.2
[ /Title
(RFP45
N03L,
RF1S45
N03L,
RF1S45
N03LS
M)
/Subject
(45A,
30V,
0.022
Ohm,
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