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參數(shù)資料
| 型號： | RF1S45N06LESM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs(45A, 60V, 0.028 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
| 中文描述： | 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 427K |
| 代理商： | RF1S45N06LESM |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFP45N06LE, RF1S45N06LESM
45A, 60V, 0.028 Ohm, Logic Level
N-Channel Power MOSFETs
These are N-Channel enhancement mode power MOSFETs
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49177.
Features
45A, 60V
r
DS(ON)
= 0.028
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N06LE
TO-220AB
FP45N06L
RF1S45N06LESM
TO-263AB
F45N06LE
NOTE: Whenordering,usetheentirepartnumber.Addthesuffix9Ato
obtain the TO-263AB variant in tape and reel i.e., RF1S45N06LESM9A.
D
G
S
JEDEC TO-220AB
JEDEC TO-263AB
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
October 1999
File Number
4076.2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP45N06LE | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs |
| RF1S45N06SM | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
| RFG45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
| RFP45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
| RFG45N06 | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S45N06LESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N06SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S4N100 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S4N100SM | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S4N100SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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