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參數資料
| 型號： | RF1S45N06SM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數： | 1/8頁 |
| 文件大小： | 73K |
| 代理商： | RF1S45N06SM |
4-455
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG45N06, RFP45N06, RF1S45N06SM
45A, 60V 0.028 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49028.
Features
45A, 60V
r
DS(ON)
= 0.028
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG45N06
TO-247
RFG45N06
RFP45N06
TO-220AB
RFP45N06
RF1S45N06SM
TO-263AB
F1S45N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S45N06SM
9A.
DRAIN
SOURCE
GATE
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3574.4
相關PDF資料 |
PDF描述 |
|---|---|
| RFG45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
| RFP45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
| RFG45N06 | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| RFP45N06 | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| RF1S45N06SM | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF1S4N100 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S4N100SM | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S4N100SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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