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參數(shù)資料
| 型號(hào)： | RF1S45N06SM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 82K |
| 代理商： | RF1S45N06SM |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
Harris Corporation 1995
3-33
S E M I C O N D U C T O R
December 1995
Absolute Maximum Ratings
T
C
= +25
o
C
RFG45N06, RFP45N06
RF1S45N06, RF1S45N06SM
60
60
±
20
UNITS
V
V
V
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Maximum Avalanche Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
AM
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
45
Refer to Peak Current Curve
Refer to UIS Curve
125
A
A
131
0.877
W
W/
o
C
o
C
-55 to +175
RFG45N06, RFP45N06,
RF1S45N06, RF1S45N06SM
45A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
A
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
Features
45A, 60V
r
DS(ON)
= 0.028
Temperature CompensatingPSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
+175
o
C Operating Temperature
Description
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
N-Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. These
transistors can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
Formerly developmental type TA49028.
Symbol
PART NUMBER
PACKAGE
BRAND
RFG45N06
TO-247
RFG45N06
RFP45N06
TO-220AB
RFP45N06
RF1S45N06
TO-262AA
F1S45N06
RF1S45N06SM
TO-263AB
F1S45N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S45N06SM
9A.
D
G
S
File Number
3574.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S4N100 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S4N100SM | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S4N100SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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