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參數(shù)資料
| 型號(hào)： | RFP4N100 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
| 中文描述： | 4.3 A, 1000 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 45K |
| 代理商： | RFP4N100 |
4-528
CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP4N100, RF1S4N100SM
4.3A, 1000V 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.
Formerly developmental type TA09850.
Features
4.3A, 1000V
r
DS(ON)
= 3.500
UIS Rating Curve (Single Pulse)
-55
o
C to 150
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N100
TO-220AB
RFP4N100
RF1S4N100SM
TO-263AB
F1S4N100
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
August 1999
File Number
2457.4
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|---|---|
| RFP4N35 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| RFP50 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY RADIO |
| RF-P50 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY POCKET AM/FM RADIOPANASONIC |
| RFP-500-50N-D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Cable & Coaxial Terminations |
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