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參數(shù)資料
| 型號： | RF1S50N06LESM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 60V, 0.022 Ohm, Logic Level,N-Channel Power MOSFETs(50A, 60V, 0.022 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
| 中文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 412K |
| 代理商： | RF1S50N06LESM |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
50A, 60V, 0.022 Ohm, Logic Level
N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49164.
Features
50A, 60V
r
DS(ON)
= 0.022
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N06LE
TO-247
FG50N06L
RFP50N06LE
TO-220AB
FP50N06L
RF1S50N06LESM
TO-263AB
F50N06LE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S50N06LESM9A.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
October 1999
File Number
4072.3
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PDF描述 |
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| RFP50N06LE | CAP Tantalum-Wet Miniature 6V 8.0 uF +/-5% Silver can Axial High Reliability , TPC - Hilton |
| RFG50N06LE | 50A, 60V, 0.022 Ohm, Logic Level,N-Channel Power MOSFETs(50A, 60V, 0.022 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
| RF1S50N06SM | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| RF1S50N06SM | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| RF1S530SM | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs(14A, 100V, 0.160 Ohm,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S50N06SM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| RF1S50N06SM9A | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S50N06SM9AS2551 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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