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參數資料
| 型號： | RF1S640SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N溝道增強型功率MOS場效應管) |
| 中文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數： | 1/7頁 |
| 文件大小： | 61K |
| 代理商： | RF1S640SM |
4-208
File Number
1585.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRF640, RF1S640SM
18A, 200V 0.180 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17422.
Features
18A, 200V
r
DS(ON)
= 0.180
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speed
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF640
TO-220AB
IRF640
RF1S640SM
TO-263AB
RF1S640
NOTE: Whenordering,usethe entire partnumber.Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
June 1999
相關PDF資料 |
PDF描述 |
|---|---|
| RF1S640 | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
| RF1S640SM | 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
| RF1S70N03SM | 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| RFP70N03 | 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
| RFP70N06 | 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF1S640SM9A | 功能描述:MOSFET USE 512-FQP19N20C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S644 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-262AA |
| RF1S644SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB |
| RF1S70N03 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S70N03SM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs |
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