
4-31
4
G
A
Preliminary
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
3
2
4
RF OUT
RF IN
GND
GND
MARKING - C8
RF2048
GENER AL PUR POS E AMPLIFIER
Broadband, Low Noise Gain Blocks
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Final PA for Low Power Applications
High Reliability Applications
Broadband Test Equipment
The RF2048 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 8000MHz.
The device is self-contained with 50
input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.
DC to 8000MHz Operation
Internally matched Input and Output
12dB Small Signal Gain
+26dBm Output IP3
+12dBm Output Power
Single Positive Power Supply
RF2048
RF2048 PCBA
General Purpose Amplifier
Fully Assembled Evaluation Board
4
Rev A5 010110
0.070
sq.
45°
+ 1°
0.055
+ 0.005
0.020
+ 0.002
0.040
+ 0.002
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
0.200 sq.
Typ
Pac kage S tyle: Mic ro-X Ceramic