
2-11
2
P
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC1
GND
GND
VCC2
RF IN
GND
GND
PC
GND
GND
GND
RF OUT
RF OUT
GND
GND
GND
BIAS
RF2104
MEDIUM POWER AMPLIFIER
900MHz ISM Band Applications
400MHz Industrial Radios
Driver for Higher Power Applications
Portable Battery-Powered Equipment
Commercial and Consumer Systems
Base Station Equipment
The RF2104 is a medium power amplifier IC. The device
is manufactured on a low cost Silicon process, and has
been designed for use as the final RF amplifier in UHF
radio
transmitters
operating
1000MHz. It may also be used as a driver amplifier in
higher power applications. The device is packaged in a
plastic quad-batwing 16-lead package, and is self-con-
tained with the exception of the output matching network,
power supply feed line, and bypass capacitors. It pro-
duces an output power level of up to 500mW (CW) at
3.6V. The device can be used in 3 cell battery applica-
tions. The maximum CW output at 3.6V is +27dBm. The
unit has a total gain of 26dB, depending upon the output
matching network.
between
400MHz
and
400MHz to 1000MHz Operation
Up to 500mW CW Output Power
26dB Small Signal Gain
40dB Gain Control Range
Single 2.7V to 3.6V Supply
40% Efficiency
RF2104
RF2104 PCBA-L
RF2104 PCBA-H Fully Assembled Evaluation Board (915MHz)
Medium Power Amplifier
Fully Assembled Evaluation Board (830MHz)
2
Rev B4 010507
0.068
0.064
0.008
0.004
-A-
0.020
0.014
0.034 REF
0.068
0.053
0.244
0.229
0.009
0.007
0.034
0.016
8° MAX
0° MIN
0.393
0.386
0.020
REF
0.157
0.150
Package S tyle: CJ 2BAT 0