
2-93
2
P
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
SeeUpgradedProductRF2189
PACKAGE BASE
GND
1
2
3
4
8
7
6
5
VCC2
VCC2
NC
RF IN
VCC1
RF OUT
RF OUT
PC
BIAS
CIRCUITS
RF2129
3V, 2.5 GHZ LINEAR POWER AMPLIFIER
2.5GHz ISM Band Applications
PCS Communication Systems
Wireless LAN Systems
Commercial and Consumer Systems
Portable Battery Powered Equipment
Broadband Spread Spectrum Systems
The RF2129 is a linear, medium power, high efficiency
amplifier IC designed specifically for low voltage opera-
tion. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final RF
amplifier in 2.5GHz spread spectrum transmitters. The
device is packaged in an 8-lead plastic package with a
backside ground and is self-contained with the exception
of the output matching network and power supply feed
line.
Single 3.3V Power Supply
+26dBm Saturated Output Power
27dB Small Signal Gain
High Power Added Efficiency
Power Down Mode
1800MHz to 2500MHz Frequency Range
RF2129
RF2129 PCBA
3V, 2.5GHz Linear Power Amplifier
Fully Assembled Evaluation Board
2
Rev B4 000323
.157
.150
.035
.016
8°MAX
0°MIN
.061
.055
.196
.189
.244
.230
.050
.010
.007
.010
.004
.019
.014
1
EXPOSED
HEATSINK
.087
.071
.123
.107
Refer to “Handling of PSOP and PSSOP Products” on page 16-15
for special handling information.
Package S tyle: PS OP-8