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參數(shù)資料
| 型號： | RF2311PCBA |
| 廠商： | RF Micro Devices, Inc. |
| 英文描述： | GENERAL PURPOSE AMPLIFIER |
| 中文描述： | 通用放大器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 61K |
| 代理商： | RF2311PCBA |
4-81
4
G
A
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
4
8
7
6
5
VCC
GND
GND
RF IN
RF OUT
GND
GND
GND
RF2311
GENER AL PUR POS E AMPLIFIER
General Purpose High Bandwidth Gain
Blocks
IF or RF Buffer Amplifiers
Broadband Test Equipment
Final PA for Medium Power Applications
Driver Stage for Power Amplifiers
The RF2311 is a general purpose, low cost low power RF
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as an easily cas-
cadable 50
gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 1600MHz.
The gain flatness and high bandwidth make the device
suitable for many other applications as well. The device is
self-contained with 50
input and output impedances,
and no external DC biasing elements are required to
operate as specified.
DC to well over 1600MHz Operation
Internally Matched Input and Output
14dB Small Signal Gain
4.2dB Noise Figure
+9dBm Output Power
Single 2.7V to 6V Positive Power Supply
RF2311
RF2311 PCBA
General Purpose Amplifier
Fully Assembled Evaluation Board
4
Rev C3 010228
.156
.152
.022
.018
5°
.056
.052
.195
.191
.240
.232
.050
.008
.004
MIN
.017
1
Package S tyle: S OP-8
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