
3-1
3
L
A
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
4
GND
3
GND
2
GND
1
RF IN
8
RF OUT
7
GND
6
GND
5
GND
RF2312
LINEAR GE NER AL PUR POS E AMPLIFIER
CATV Distribution Amplifiers
Cable Modems
Broadband Gain Blocks
Laser Diode Driver
Return Channel Amplifier
Base Stations
The RF2312 is a general purpose, low cost high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 75
gain block. The gain flatness of
better than 0.5dB from 5MHz to 1000MHz, and the high
linearity, make this part ideal for cable TV applications.
Other applications include IF and RF amplification in
wireless voice and data communication products operat-
ing in frequency bands up to 2500MHz. The device is
self-contained with 75
input and output impedances,
and requires only two external DC biasing elements to
operate as specified.
DC to well over 2500MHz Operation
Internally Matched Input and Output
15dB Small Signal Gain
3.8dB Noise Figure
+20dBm Output Power
Single 5V to 12V Positive Power Supply
RF2312
RF2312 PCBA
RF2312 PCBA
Linear General Purpose Amplifier
Fully Assembled Evaluation Board - 75
Fully Assembled Evaluation Board - 50
3
Rev C2 010813
0.248
0.232
0.200
0.192
0.160
0.152
0.018
0.014
0.050
0.059
0.057
0.010
0.004
-A-
0.0100
0.0076
0.0500
0.0164
8° MAX
0° MIN
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
Pac kage S tyle: S OIC-8