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參數(shù)資料
| 型號： | RF3100-2 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V 900MHZ LINEAR AMPLIFIER MODULE |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 6 X 6 MM, LGM, 7 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 118K |
| 代理商： | RF3100-2 |
2-269
2
P
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
3
VREG
2
RF IN
1
VCC1
6
RF OUT
7
GND
5
VCC2
4
V
RF3100-2
3V 900MHZ LINEAR AMPLIFIER MODULE
3V CDMA/AMPS Cellular Handsets
3V CDMA2000/1X Cellular Handsets
Spread-Spectrum Systems
Designed for Compatibility with Qualcomm
Chipsets
The RF3100-2 is a high-power, high-efficiency linear
amplifier module targeting 3V hand-held systems. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual-
mode 3V CDMA/AMPS hand-held digital cellular equip-
ment, spread-spectrum systems, and other applications
in the 824MHz to 849MHz band. The RF3100-2 has a
digital control line for low power application to reduce the
current drain. The device is self-contained with 50
input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
Input/Output Internally Matched@50
Single 3V Supply
28dBm Linear Output Power
29dB Linear Gain
45mA Idle Current
RF3100-2
RF3100-2 PCBA
3V 900MHz Linear Amplifier Module
Fully Assembled Evaluation Board
2
Rev A3 011017
6.0 sq
0.100
3.000
4.390
0.600
0.800 sq
typ
NOTE:
Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package S tyle: LGM (6 mmx 6 mm)
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