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參數(shù)資料
| 型號： | RFD10P03 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET |
| 中文描述： | 10A條，30V的，0.200W，邏輯電平P溝道功率MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 272K |
| 代理商： | RFD10P03 |
S E M I C O N D U C T O R
1
May 1997
Features
10A, 30V
r
DS(ON)
= 0.200
Temperature CompensatingPSPICE Model
PSPICE Thermal Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Formerly developmental type TA49205.
Description
These products are P-Channel power MOSFETs manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD10P03L
TO-251AA
10P03L
RFD10P03LSM
TO-252AA
10P03L
RFP10P03L
TO-220AB
F10P03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the
TO-252AA
variant in tape and reel, i.e.
RFD10P03LSM
9A..
G
D
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
3515.1
RFD10P03L, RFD10P03LSM,
RFP10P03L
10A, 30V, 0.200
, Logic Level
P-Channel Power MOSFET
相關(guān)PDF資料 |
PDF描述 |
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| RFD10P03L | 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET |
| RFD12N06RLESM | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFD12N06RLE | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFD12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
| RFD12N06RLESM | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD10P03L | 功能描述:MOSFET TO-251 P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD10P03LSM | 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD10P03LSM9A | 制造商:HARRIS 制造商全稱:HARRIS 功能描述:10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET |
| RFD12N06RLE | 功能描述:MOSFET 60V/12a/0.135Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD12N06RLE | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC I-PAK |
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