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參數資料
| 型號： | RFD16N03L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場效應管) |
| 中文描述： | 16 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數： | 1/8頁 |
| 文件大小： | 107K |
| 代理商： | RFD16N03L |
6-156
File Number
4013.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD16N03L, RFD16N03LSM
16A, 30V 0.025 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. This performance is accomplished through a
special gate oxide design which provides full rated
conductance at gate bias in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA49030.
Features
16A, 30V
r
DS(ON)
= 0.025
Temperature Compensating PSPICE Model
Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering InformationS
PART NUMBER
PACKAGE
BRAND
RFD16N03L
TO-251AA
16N03L
RFD16N03LSM
TO-252AA
16N03L
NOTE: When ordering, use the entire part number. Add the suffix 9A,
toobtaintheTO-252AAvariantintapeandreel,e.g.RFD16N03LSM9A.
DRAIN
SOURCE
GATE
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
DRAIN
GATE
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
April 1999
相關PDF資料 |
PDF描述 |
|---|---|
| RFD16N03LSM | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場效應管) |
| RFD16N05L | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場效應管) |
| RFD16N05LSM | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場效應管) |
| RFD16N06LE | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RFD16N03LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N03LSM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N03LSM9AR4610 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N05 | 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N05 | 制造商:Intersil Corporation 功能描述:MOSFET N I-PAK |
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