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參數資料
| 型號： | RFD3055LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數： | 1/8頁 |
| 文件大小： | 82K |
| 代理商： | RFD3055LE |
4-435
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD3055, RFD3055SM, RFP3055
12A, 60V 0.150 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49082.
Features
12A, 60V
r
DS(ON)
= 0.150
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD3055
TO-251AA
FD3055
RFD3055SM
TO-252AA
FD3055
RFP3055
TO-220AB
FP3055
NOTE: When ordering, use the entire part number. Add the suffix 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
File Number
3648.2
相關PDF資料 |
PDF描述 |
|---|---|
| RFD3055LESM | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD3055SM | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
| RFD3055LESM9A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA |
| RFD3055 | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD3055SM | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RFD3055LE | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 60V, 11A TO-251AA |
| RFD3055LE_Q | 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD3055LE_R4470 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD3055LE_R4821 | 功能描述:MOSFET N-Ch Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD3055LESM | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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