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參數(shù)資料
| 型號： | RFD4N06L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 4 A, 60 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 38K |
| 代理商： | RFD4N06L |
6-189
File Number
2837.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD4N06L, RFD4N06LSM
4A, 60V 0.600 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFD4N06L, RFD4N06LSM are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5 volt) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conduction at gate biases in the 3-5 volt
range, thereby facilitating true on-off power control from logic
circuit supply voltages.
Formerly developmental type TA09520.
Features
4A, 60V
r
DS(ON)
= 0.600
Design Optimized for 5 Volt Gate Drive
Can be Driven Directly From Q-MOS, N-MOS,
or TTL Circuits
SOA is Power Dissipation Limited
175
o
C Rated Junction Temperature
Logic Level Gate
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD4N06L
TO-251AA
RFD4N06L
RFD4N06LSM
TO-252AA
RFD4N06LSM
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
GATE
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
June 1999
相關(guān)PDF資料 |
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| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD7N10LE | 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs |
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| RFF60P06 | 25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET |
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