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參數(shù)資料
型號(hào): RFD8P06LESM
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
中文描述: 8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 87K
代理商: RFD8P06LESM
4-117
File Number
3937.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright Intersil Corporation 1999.
RFD8P06E, RFD8P06ESM, RFP8P06E
8A, 60V 0.300 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate
ESD protection and are designed to withstand 2kV (Human
Body Model) of ESD.
Formerly developmental type TA49044.
Features
8A, 60V
r
DS(ON)
= 0.300
Temperature Compensating PSPICE
Model
2kV ESD Protected
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP8P06E
TO-220AB
RFP8P06E
RFD8P06ESM
TO-252AA
D8P06E
RFD8P06E
TO-251AA
D8P06E
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
RFD8P06ESM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
Data Sheet
July 1999
相關(guān)PDF資料
PDF描述
RFD8P06 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, P-Channel Power MOSFET(8A, 60V, 0.300Ω,額定靜電釋放P溝道功率MOS場(chǎng)效應(yīng)管)
RFP8P10 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET(8A, 100V, 0.400 Ω,P溝道增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管)
RFPIC12C509AG 18/20-Pin 8-Bit CMOS Microcontroller with UHF ASK/FSK Transmitter
RFPIC12C509AF 8-Pin, 8-Bit CMOS Microcontrollers
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD8P06LESM9A 制造商:Fairchild Semiconductor Corporation 功能描述:
RFD90101 功能描述:RFDUINO TEASER KIT 制造商:rf digital corporation 系列:RFduino 零件狀態(tài):有效 類型:收發(fā)器; 智能低功耗(BLE)藍(lán)牙? 4.x 頻率:2.4GHz 配套使用產(chǎn)品/相關(guān)產(chǎn)品:RFD22102 所含物品:2 個(gè)板 標(biāo)準(zhǔn)包裝:1
RFD90102 功能描述:RFDUINO PROJECT DEV KIT 制造商:rf digital corporation 系列:RFduino 零件狀態(tài):有效 類型:收發(fā)器; 智能低功耗(BLE)藍(lán)牙? 4.x 頻率:2.4GHz 配套使用產(chǎn)品/相關(guān)產(chǎn)品:RFD22102 所含物品:7 個(gè)板 標(biāo)準(zhǔn)包裝:1
RFD90103 功能描述:RFDUINO EXPERIMENTERS DEV KIT 制造商:rf digital corporation 系列:RFduino 零件狀態(tài):有效 類型:收發(fā)器; 智能低功耗(BLE)藍(lán)牙? 4.x 頻率:2.4GHz 配套使用產(chǎn)品/相關(guān)產(chǎn)品:RFD22102 所含物品:12 板 標(biāo)準(zhǔn)包裝:1
RFD90104 功能描述:RFDUINO MULTI PROJECT DEV KIT 制造商:rf digital corporation 系列:RFduino 零件狀態(tài):有效 類型:收發(fā)器; 智能低功耗(BLE)藍(lán)牙? 4.x 頻率:2.4GHz 配套使用產(chǎn)品/相關(guān)產(chǎn)品:RFD22102 所含物品:16 個(gè)板 標(biāo)準(zhǔn)包裝:1
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