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參數資料
| 型號： | RFG60P05E |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 60A, 50V, 0.030 Ohm,P-Channel PowerMOSFET(60A, 50V, 0.030 Ω,P溝道增強型功率MOS場效應管) |
| 中文描述： | 60 A, 50 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 94K |
| 代理商： | RFG60P05E |
4-147
File Number
2745.6
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG60P05E
60A, 50V 0.030 Ohm, ESD Rated,
P-Channel Power MOSFET
This is a P-Channel power MOSFET manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. It was
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. This type can be operated directly from integrated
circuits.
Formerly developmental type TA09835.
Features
60A, 50V
r
DS(ON)
= 0.030
Temperature Compensating PSPICE
Model
2kV ESD Rated
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG60P05E
TO-247
RFG60P05E
NOTE:
When ordering, use the entire part number.
D
G
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Data Sheet
July 1999
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相關代理商/技術參數 |
參數描述 |
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